Document Details

Document Type : Article In Conference 
Document Title :
Effect of Gate Dielectrics on the Performance of P-Type Cu2O TFTs Processed at Room Temperature
تأثير مواد العزل على أداء ترانزستور أغشية Cu2O الرقيقة ذات القطبية الموجبة المصنعة في درجة حرارة الغرفة
 
Subject : P-type TFTs 
Document Language : English 
Abstract : Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200oC. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-k SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. 
Conference Name : ICMSET 2013 
Duration : From : 12-1-1435 AH - To : 13-1-1435 AH
From : 16-11-2013 AD - To : 17-11-2013 AD 
Publishing Year : 1435 AH
2014 AD 
Number Of Pages : 5 
Article Type : Article 
Conference Place : London 
Organizing Body : SCIEI 
Added Date : Saturday, December 7, 2013 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
هالة عبد العزيز الجوهريAljawhari, Hala AbdulazizInvestigatorDoctoratehaljawhari@kau.edu.sa
ألفونسو كارفيو فرسكاسFrescas, Alfonso CaraveoResearcherDoctoratealfanso.caraveo@kaust.edu.sa

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