Document Details

Document Type : Thesis 
Document Title :
Source-Drain Contact Engineering for Enhanced Performance of P-type Cu2O Thin Film Transistors
هندسة تلامس قطبي (المصدر-المصرف) من أجل تحسين أداء ترانزستورات أغشية أكسيد النحاس الموجبة القطبية
 
Subject : Faculty of Science 
Document Language : Arabic 
Abstract : The interface of metal/semiconductor contact electrode is a crucial key that affects the charge carrier injection and, hence, influences the whole device performance. A sufficient effort should be devoted to engineering the contact resistance (Rc) in any semiconductor devices, principally those based on p-type semiconductors. Such resistance can be quantified and extracted by applying the Transfer Line Method (TLM). The first part of this thesis is dedicated to modifying the electrical characteristics of sputtered cuprous oxide (Cu2O) thin films to enable their utilization as the p-type channel in TFTs. To achieve the intended objective, nitrogen (N2) was implemented as a dopant to enhance the channel hole-conduction through varying proportions of 0%, 3%, and 5%. Through the second part of this thesis, we aimed to optimize the contact resistance of devices by inserting a buffer layer between the metallic electrodes (Au and Cu) and the semiconductive channel (Cu2O). In this work, molybdenum trioxide (MoO3) was utilized as a buffer layer, and it has been injected according to two different schemes: scheme A and scheme B. In scheme A, MoO3 was deposited on the whole top side of the Cu2O channel. In such scheme, the thin layer of MoO3 could enhance the hole-injection on one hand and control the back-channel phase by forming a high resistance surface-path that reduces the drain off-current, on the other. However, in scheme B, MoO3 was deposited only under the electrode’s areas through a shadow mask. In all cases, both Au and Cu were examined as metallic electrodes to enhance the hole-injection, the low-cost Cu electrodes could replace the expensive Au electrodes. 
Supervisor : Prof. Hala Al Jawhari 
Thesis Type : Doctorate Thesis 
Publishing Year : 1445 AH
2023 AD
 
Co-Supervisor : Prof. El Sayed Shalaan 
Added Date : Wednesday, November 1, 2023 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
بدرية سعد سلطانSultan, Badriah SaadResearcherDoctorate 

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