Document Details

Document Type : Thesis 
Document Title :
Electrical Properties Investigation of InP Quantum Dot Laser Diodes Grown at Various Temperatures
تحقيق الخصائص الكهربائية لثنائيات ليزر نقاط الكم المكونة من فوسفيد الانديوم المبنية عند درجات حرارة مختلفة
 
Subject : Faculty of Science 
Document Language : Arabic 
Abstract : In this thesis, the effect of growth temperature on electrical properties of InP quantum dot laser diodes grown on GaAs substrates are investigated. Device structures in this study contain self- assembled InP quantum dots grown at various temperatures on a top of (Al0.3Ga0.7)0.51In0.49P barriers and capped with Ga0.51In0.49P quantum well layers. The growth temperature of quantum well, barriers and quantum dots layers varied with values of 7100C, 7300C and 7500C in the structures. This study includes an important parameters of electrical properties such as series resistance, ideality factor and reverse saturation current density. In this thesis, these parameters are measured from the current-voltage characteristic for different structures over a wide temperature range starting from 77K to 400K. The ideality factor of a diode is a measure of how closely the diode follows the ideal diode equation. The ideality factor for the three studied structures are decreasing with increasing temperature until 270K due to the thermionic effect on the carriers. Above 300K, the ideality factor is almost constant within 2.0 -2.5. The ideality factor shows lower values for the lower growth temperature structure which appears clearly at low temperatures. This decrease is due the higher number of available states in the structure, which causes threshold current density to decrease and hence lower ideality factor. The series resistance decreases with increasing temperature for all studied structures because of the thermal energy increase, which frees out more carriers from their states. The series resistance for structures grown at 730 0C has the highest value compared to others due to the high number of small dots in this structure, which has high percentage of InP material with high resistivity. Therefore, the series resistance are consistent with this percentage. Furthermore, the reverse saturation current density has the highest value for structure grown at 7300C but only at high temperatures, which is consistent with the behavior of series resistance due to high number of small dots. 
Supervisor : Dr. Mohammed Saad Al-Ghamdi 
Thesis Type : Master Thesis 
Publishing Year : 1442 AH
2021 AD 
Added Date : Friday, August 13, 2021 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
حسناء سلمان السلميAlsulami, Hasna SalmanResearcherMaster 

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